Intel and Micron have announced it's new technology 3D Xpoint which is 1,000 times faster than NAND Flash, but still the NAND Flash was released 1989.
The market price of 3D XPoint maybe more than an average person can accept. 3D XPoint sales will start in 2016, the products will be manufacture at US state of Utah.
3D XPoint Technical details
- Cross-type array structure: vertical conductor connecting 128 billion of high-density memory storage unit configuration. Each storage unit to store a bit of data. So compact, making it a high-performance and high-density bit of storage space.
- Stackable: In addition to the compact crossover array structure, memory storage units will be stacked in several layers. Each grain early technology can store 128Gb, and there are two layers of stacked memory devices; and future generations of technology will increase the amount of memory element layer, together with traditional development circuit miniaturization, will be able to further enhance the system capacity.
- Selector (Selector): the system will be sent to every change of the voltage selector on the operation of the memory storage unit access and write data. This design requirements omitted transistor, can increase capacity and reduce costs.
- Fast switching storage unit: miniaturization of storage units, with fast switching of the selector, low-latency cross structure arrays, and fast write algorithms that allows the storage unit faster switching operation of the state, faster than today's variety of non-volatile memory technology.
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